Analysis of grain growth behavior of multicrystalline Mg₂Si

Abstract Multicrystalline Mg 2 Si crystal with a diameter of 15 mm was grown via vertical Bridgman method. To clarify the growth mechanism multicrystalline structure, grain behavior analyzed. This carried out through segmenting grains by mean shift clustering using light intensity profile obtained from multiple optical reflection images wafers and stacking segmented direction. Further orientation measurement revealed that higher surface energy competitively expanded to lateral direction during growth. We speculated occurred because supercooling high enough show difference in each grain’s rate. idea supported simulation tendency for crystallization rate increase toward latter half stage, which is consistent assumption supercooling.